In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 10S ( 2013-10-01), p. 10MC05-
Abstract:
The effect of post-chemical–mechanical polishing (CMP) surface treatments on the interfacial adhesion energies between electroplated Cu thin film and SiN x capping layer was evaluated using a four-point bending test. The polished Cu surface was treated by one of three methods: no surface treatment, cleaning by plasma with a vacuum break, and cleaning by the wet chemical method. X-ray photoemission spectroscopy (XPS) analysis on the delaminated interfaces, cross-sectional high-resolution transmission electron microscopy (HR-TEM), and also the electron energy loss spectroscopy (EELS) analysis were performed on the interfaces. The interfacial adhesion energy increases with post-CMP cleaning, which is strongly influenced by the effective removal of residual oxygen at the Cu surfaces.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.10MC05
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink