In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 12A ( 1990-12-01), p. L2345-
Abstract:
In order to produce high-performance capacitors with a rough surface polysilicon film as a storage electrode, we investigate various fabrication conditions for polysilicon films. We fabricated such capacitors that attained 1.55 times as much capacitance as those with a conventional polysilicon electrode. Capacitors with the rough electrode show almost identical leakage current characteristics to those of conventional ones. In the evaluation of their reliability, we found that they have lifetimes of more than 1×10 10 seconds, which is sufficient for next-generation DRAM applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.29.L2345
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1990
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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