In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 3A ( 1999-03-01), p. L245-
Abstract:
We measured the pseudo-dielectric function
of self-assembled InAs/GaAs quantum dots at room temperature using spectroscopic ellipsometry.
We observed a strong excitonic peak at 0.9 eV, which was attributed to quantum dot transitions. We also observed a plateau from 1.2 eV to 1.4 eV, which
arose from steplike joint density of states originating from an InAs wetting layer. Our room
temperature data are very similar to the 1.8 K photoluminescence excitation spectra of InAs/GaAs quantum dots reported in the literature. The higher energy dielectric response of the
quantum dots enabled us to estimate the morphology of the quantum dots using
effective medium analysis. These results were compared to atomic force microscopy measurement results.
Effective medium analysis showed that a GaAs cap layer was preferentially grown on the InAs wetting layer rather
than on InAs islands.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L245
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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