In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6942-
Abstract:
TiN films were prepared using a new Ti precursor, tetrakis(ethylmethylamido)titanium (TEMAT) and
ammonia. The premixing of NH 3 and TEMAT provided the control over the gas phase reaction of the two
reactants to generate the intermediates required for the deposition of high-quality TiN films. Film resistivities of 800–1200 µ Ω-cm and low levels of impurities were obtained in TiN films deposited under the condition of
low NH 3 /TEMAT ratios, wafer temperature of 350°C and total reactor pressure of 1 Torr. In addition, the
introduction of a small amount of ammonia improved the diffusion barrier property for Cu metallization up to 600°C. Slight degradation in the conformality of TiN films was observed at the low ratio of NH 3 /TEMAT.
Furthermore, the addition of NH 3 tended to improve the surface morphology of TiN films and did not cause any
particle generation due to the low process pressure of 1 Torr. X-ray photoelectron spectroscopy (XPS) analysis revealed the role of ammonia in the homogeneous reaction.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6942
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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