In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 9S ( 2010-09-01), p. 09MA04-
Abstract:
Lead-free piezoelectric (K,Na)(Nb,Ta)O 3 thin films were prepared by chemical solution deposition. Perovskite single-phase (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 and Mn-doped (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films were successfully fabricated at 600 °C on Pt/TiO x /SiO 2 /Si substrates by controlling the excess amounts of K and Na, and Mn by doping. The (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films showed poor ferroelectric polarizations due to the insufficient insulating resistance at room temperature. The leakage current density of the (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 films, especially in the high-applied-field region, was markedly reduced by doping with a small amount of Mn. Also, the ferroelectric properties of the (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films were markedly improved by Mn doping. 0.5 and 1.0 mol % Mn-doped (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films exhibited well-shaped ferroelectric polarization–electric field ( P – E ) hysteresis loops at room temperature. The remanent polarization ( P r ) and coercive field ( E c ) values of the 0.5 and 1.0 mol % Mn-doped (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films at 1 kHz were approximately 14 and 21 µC/cm 2 , and 111 and 86 kV/cm, respectively. Furthermore, these films showed a typical field-induced butterfly loop, and the estimated effective d 33 values were 58 pm/V for the 0.5 mol % Mn-doped (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films and 41 pm/V for the 1.0 mol % Mn-doped (K 0.5 Na 0.5 )(Nb 0.8 Ta 0.2 )O 3 thin films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.09MA04
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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