In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6977-
Abstract:
Pseudomorphic metastable Ge 0.06 Si 0.94 layers grown by molecular
beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF 2 ions with two different doses of 3 ×10 13 and
2.5 ×10 14 cm -2 , or by 16 keV B ions with a dose of 4 ×10 14 cm -2 .
The implanted samples were subsequently annealed at 800 and 900°C for 30 min in a vacuum tube furnace.
Observed by 2 MeV 4 He channeling spectrometry before annealing, only the
sample implanted at a dose of 2.5 ×10 14 BF 2 cm -2 is amorphized from surface to a depth of about 90 nm. Crystalline
degradation of post-annealed Ge 0.06 Si 0.94 samples becomes
pronounced as the dose increases. Even though the both samples implanted with 3 ×10 13 BF 2 cm -2 and 4 ×10 14 B cm -2 initially show almost the same levels of radiation damage in the channeling spectra,
the sample implanted at 3 ×10 13 BF 2 cm -2 only conserves
the same crystalline quality as the as-grown GeSi after being annealed. It is concluded that such a low dose of 3 ×10 13 BF 2 cm -2 can be doped by implantation
without causing radiation or strain-induced defects in the pseudomorphic GeSi.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6977
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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