In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 59, No. 11 ( 2020-11-01), p. 110901-
Abstract:
The study found that homoepitaxial Na-flux GaN has a large stress at the interface, and the stress is released to a certain extent within 50 μ m in the growth direction of the Na-flux GaN. After passing through the columnar growth region, the Na-flux GaN tends to a stress-free state finally. The columnar growth mode is produced by GaN island growth, the islands nucleate and coalescence to produce tensile stress. The Na-flux GaN undergoes a columnar growth to generate tensile stress, which offsets the residual compressive stress at the interface, which is conducive to stress release.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abbd7c
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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