In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 8A ( 2001-08-01), p. L826-
Abstract:
Rugged metal electrode (RME) was suggested and evaluated as a bottom electrode of high-density memory capacitors. Rugged ruthenium films (RME-Ru) were successfully fabricated through volume shrinking of ruthenium oxide films under reduction ambient (RuO x +H 2 =Ru+H 2 O). The effective surface area of RME-Ru films was significantly enlarged due to the formation of wrinkle on its surface, which resulted in low SiO 2 equivalent thickness (Tox) as low as ∼ 6 Å with Ru/TaO x (110 Å)/RME-Ru capacitor. It is believed that RME technique will be very useful to realize and extend MIM (Metal-Insulator-Metal) capacitor era in the mass production of high density memory devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L826
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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