In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 826-
Abstract:
In studies of the degradation effect in advanced self-aligned bipolar transistors, we observe random telegraph noise (RTN). This phenomenon closely resembles that in metal-oxide-semiconductor field-effect transistors (MOSFETs), but the temperature and voltage dependences are different. Based on tunneling transitions between a single border trap, Si–SiO 2 interface states and the Si-band structure, a model is suggested to explain this RTN in advanced self-aligned bipolar transistors. The analysis of the complicated voltage and temperature dependences of the capture/emission time and the amplitude of the RTN affords a unique opportunity to study the nature of defects and the occupation kinetics of an individual trap in SiO 2 . This study of the RTN also directly provides information about the microscopic origin of hot carrier degradation and low-frequency noise.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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