In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 3R ( 2010-03-01), p. 031201-
Abstract:
We have investigated the temperature, T , dependence of a highly sensitive far-infrared (FIR) photodetector fabricated on a two-dimensional electron gas system in GaAs/AlGaAs heterostructures. The photoinduced resistance change, Δ R x x , observed in different integer quantum Hall (QH) regimes shows different T dependences. At high T , Δ R x x is limited by the vanishing of rising electronic temperature Δ T e . For T 〈 5 K, Δ R x x can either rapidly increase with lower T or slowly diminish, determined by the interplay between the magnetic field dependence of Δ T e and the T dependence of QH states.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.031201
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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