In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4R ( 2001-04-01), p. 2221-
Abstract:
This letter describes a unique process for the preparation of high-quality tantalum oxynitride (TaO x N y ) films via NH 3 annealing of Ta 2 O 5 followed by reoxidation in an O 3 ambient for use in gate dielectric applications. Compared with tantalum oxide (Ta 2 O 5 ), a significant improvement in dielectric constant was obtained by the ammonia treatment. Low-temperature reoxidation in an O 3 ambient resulted in a significantly reduced leakage current. Compared with reoxidation in an O 2 ambient, TaO x N y films prepared by reoxidation in an O 3 ambient show less charge trapping under electrical stress.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2221
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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