In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 6R ( 2013-06-01), p. 060204-
Abstract:
This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In 2 O 3 ) TFTs prepared using different annealing temperatures. Even though the a-In 2 O 3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In 2 O 3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm 2 V -1 s -1 and an on/off current ratio of over 10 6 was exhibited by a-In 2 O 3 TFTs annealed at 250 °C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.060204
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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