In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 7A ( 1996-07-01), p. L813-
Abstract:
A dominant deep level with an activation energy of 0.23–0.26 eV was observed by admittance spectroscopy in SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The Sb 4 /Ga flux ratio was found to affect the Hall mobility and the concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio of around 7 obtained for GaSb grown at 550° C, which should correspond to the lowest ratio at which a Sb-stabilized surface reconstruction can be maintained. This electron level is commonly detected in n-type (SnTe-, S- and Te-doped) GaSb, but not in undoped p-type GaSb, suggesting that the level is not a simple native defect, but may be connected with the impurity used for n-type doping of GaSb.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L813
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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