In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 11S ( 2013-11-01), p. 11NA06-
Abstract:
The program efficiency and endurance characteristics of sub-50 nm NAND flash devices with various self-aligned shallow trench isolation (SA-STI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.11NA06
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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