In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 3R ( 2012-03-01), p. 035503-
Abstract:
P-type CuGaO 2 films have been fabricated on silicon substrates by the sol–gel method. The stable sol solutions for CuGaO 2 growth were developed by the mixing of Cu–O and Ga–O sol solutions using copper(II) acetate monohydrate and tris(acetylacetonato) gallium(III), respectively. Phase separation in CuGaO 2 films depends on the sol solution temperature and postbake temperature and duration. CuGaO 2 films without a CuO phase were fabricated by postbaking at temperatures of approximately 800 °C for 1 h in N 2 atmosphere. The sol–gel-derived CuGaO 2 films show high transparency of more than 80% in the visible range, and the energy gap is approximately 3.6 eV.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.035503
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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