In:
Nanotechnology, IOP Publishing, Vol. 33, No. 2 ( 2022-01-08), p. 025603-
Kurzfassung:
Nanostructural modification of two-dimensional (2D) materials has attracted significant attention for enhancing hydrogen evolution reaction (HER) activity. In this study, the nanostructure of TaS 2 films was controlled by controlling the Ar/H 2 S gas ratio used in plasma-enhanced chemical vapor deposition (PECVD). At a high Ar/H 2 S gas ratio, vertically aligned TaS 2 (V-TaS 2 ) films were formed over a large-area (4 in) at a temperature of 250 °C, which, to the best of our knowledge, is the lowest temperature reported for PECVD. Furthermore, the plasma species formed in the injected gas at various Ar/H 2 S gas ratios were analyzed using optical emission spectroscopy to determine the synthesis mechanism. In addition, the 4 in wafer-scale V-TaS 2 was analyzed by x-ray photoelectron spectroscopy, transmission electron microscopy, and atomic force microscopy, and the HER performance of the as-synthesized TaS 2 fabricated with various Ar/H 2 S ratios was measured. The results revealed that, depending on the film structure of TaS 2 , the HER performance can be enhanced owing to its structural advantage. Furthermore, the excellent stability and robustness of V-TaS 2 was confirmed by conducting 1000 HER cycles and post-HER material characterization. This study provides important insights into the plasma-assisted nanostructural modification of 2D materials for application as enhanced electrocatalysts.
Materialart:
Online-Ressource
ISSN:
0957-4484
,
1361-6528
DOI:
10.1088/1361-6528/ac2b6c
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2022
ZDB Id:
1362365-5
SSG:
11
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