In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 8 ( 2016-08-01), p. 081501-
Abstract:
A low interfacial trap density ( D it ) of 2.2 × 10 11 eV −1 cm −2 has been achieved with an atomic layer deposited (ALD) single crystal Y 2 O 3 epitaxially on n-GaAs(001), along with a small frequency dispersion of 10.3% (2.6%/decade) at the accumulation region in the capacitance–voltage ( C – V ) curves. The D it and frequency dispersion in the C – V curves in this work are the lowest among all of the reported ALD-oxides on n-type GaAs(001). The D it was measured using the conductance–voltage ( G – V ) and quasi-static C – V (QSCV) methods. Moreover, the heterostructure was thermally stable with rapid annealing at 900 °C under various durations in He and N 2 , which has not been achieved in the heterostructures of ALD-Al 2 O 3 or HfO 2 on GaAs.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.081501
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9
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