In:
Semiconductor Science and Technology, IOP Publishing, Vol. 36, No. 4 ( 2021-04-01), p. 045003-
Kurzfassung:
In this study, the time response behavior of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) to x-ray irradiation pulses with different frequencies is analyzed. The formulas for the time response of excited and recovery behaviors are proposed for possible use in circuit performance enhancement in real x-ray irradiation situations. The predicted and measured results fit fairly well, which is important in the development of x-ray image sensors using LTPS TFTs.
Materialart:
Online-Ressource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/abe316
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2021
ZDB Id:
54647-1
ZDB Id:
1361285-2
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