In:
Applied Physics Express, IOP Publishing, Vol. 16, No. 4 ( 2023-04-01), p. 041007-
Abstract:
In this work, we present an inversion-mode In 0.53 Ga 0.47 As planar MOSFETs with current gain cutoff frequency ( f T ) = 275 GHz and maximum oscillation frequency ( f max ) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance ( g m ) shows 1035 ( μ S/ μ m). These extraordinary properties are attributed to the N 2 remote plasma treatment which results in excellent high- k /III-V interface quality. With the assistance of delay-time analysis, effective electron velocity ( V eff ) of 2.88 × 10 7 (cm s –1 ) is extracted for a possible explanation of the observed record f T performance.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/acccd4
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
2417569-9
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