In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7A ( 1997-07-01), p. L839-
Abstract:
Thin silicon-on-insulator (SOI) layers of 0.5–2 µ m thickness are characterized by the microwave photoconductivity decay (µ-PCD) method with an N 2 laser as the excitation source. The penetration depth of the N 2 laser light is less than 0.1 µ m, and thus the excess carriers are excited only in the SOI layers. The measured recombination lifetime is sensitive to SOI thickness and interface properties, and thus the µ-PCD method can be used for characterization of the interface and observation of thickness variation. The surface (interface) recombination is considered as the dominant recombination mechanism.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L839
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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