In:
Advances in Materials Science and Engineering, Hindawi Limited, Vol. 2015 ( 2015), p. 1-7
Abstract:
Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al 2 O 3 substrates by DC magnetron cosputtering from targets of Ni 0.35 -Cr 0.25 -Si 0.2 -Al 0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al 0.9 Ni 4.22 , Cr 2 Ta, and Ta 5 Si 3 phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μ Ω -cm with −10 ppm/°C of temperature coefficient of resistance (TCR).
Type of Medium:
Online Resource
ISSN:
1687-8434
,
1687-8442
Language:
English
Publisher:
Hindawi Limited
Publication Date:
2015
detail.hit.zdb_id:
2501025-6
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