Keywords:
Forschungsbericht
;
Gasphasenepitaxie
;
MOCVD-Verfahren
;
Halbleiterschicht
;
Drei-Fünf-Halbleiter
;
Mathematisches Modell
Description / Table of Contents:
MOVPE of III-V compound semiconductors, mathematical modelling, numerical simulation, sparse grids, parallelisation
Type of Medium:
Online Resource
Pages:
195 p. = 18084 kB, text
Edition:
[Electronic ed.]
URL:
https://edocs.tib.eu/files/e001/254297943.pdf
URL:
https://edocs.tib.eu/files/e001/254297943l.pdf
Language:
German
,
English
Note:
nIndex. - Contract no. BMBF 01 IR 502 A 1. - Joint project no. 00020309. - Bibliographic datas are partially researched
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