In:
physica status solidi c, Wiley, Vol. 6, No. S2 ( 2009-06)
Kurzfassung:
A UV photodetector based on an Al x Ga 1‐x N/GaN junction hetero‐field‐effect transistor (JHFET) with a p‐GaN gate was fabricated. The dark current density was as low as 10 nA/mm at a drain‐source bias of 5 V. When the JHFET was irradiated with 356 nm (∼400 μW/cm 2 ) UV light, a photocurrent, of over 1 mA/mm with calculated responsivity of over 1 × 10 5 A/W was realized. Also, this device reacted to a flame. The responsivity is observed at a 4th‐order‐magnitude cutoff wavelength of approximately 370 nm, which correspond to the band edge of GaN. The decay and buildup response times are approximately 2.5 and 1.9 ms, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Materialart:
Online-Ressource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200880815
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2009
ZDB Id:
2105580-4
ZDB Id:
2102966-0
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