In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 19, No. 3 ( 2001-05-01), p. 1085-1086
Abstract:
A heterojunction based on polyacetylene is fabricated through directly synthesizing (CH)x on the surface of n-SnO2. The relationship of photocurrent density Jph versus incident power for the heterojunction is obtained by using argon–ion laser. Only considering the absorption of polyacetylene, the formula of the photocurrent density of the heterojunction based on polyacetylene has been deduced.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2001
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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