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  • American Vacuum Society  (2)
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  • American Vacuum Society  (2)
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  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 13, No. 6 ( 1995-11-01), p. 2843-2847
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 13, No. 6 ( 1995-11-01), p. 2843-2847
    Abstract: Cubic boron nitride films were successfully prepared on Si(100) substrates by radio frequency (rf) bias sputtering of a hexagonal boron nitride target in pure Ar discharge with the aid of a magnetic field and with the phase regulation of the rf voltages applied to the target and substrate electrodes. Above the threshold of the negative substrate bias voltage (VS), the infrared (IR) absorbance corresponding to the cBN TO mode showed a linear increase proportional to deposition time, while that of the sp2 phase kept a nearly constant value. The resulting dependency indicated that the cBN films consisted of a double-layered structure caused by an initial deposition of the sp2 phase and the subsequent growth of a cBN single phase, and did not consist of a two-phase mixed layer. The layered structure was also confirmed by observing the depth dependence of the IR spectra. The growth rate of the cubic phase and the thickness of the initial sp2 bonded layer were estimated to be approximately 1 nm/s and 40 nm, respectively, for cases where VS ranged from 250 to 300 V at p=16 m Torr. This rate was relatively high compared with those of other techniques used for cBN deposition.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1997
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 15, No. 6 ( 1997-11-01), p. 2859-2863
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 15, No. 6 ( 1997-11-01), p. 2859-2863
    Abstract: Mass and energy measurements of ions and neutrals impinging on a substrate surface were performed during radio frequency (rf) bias sputter deposition of cubic boron nitride (cBN) thin films in a pure Ar discharge. The sampling system was rf driven to measure the correct energy of ions impinging to the rf driven substrate. The ion energy distributions showed asymmetric bimodal shapes and the energy spreads varied with the masses of ions and the negative substrate bias voltage (Vs). Ar+ was the most dominant ion, and the average energy and energy spread changed with Vs from 90 to 310 eV and from 40 to 140 eV, respectively. The flux ratio of Ar+ to B (Φi/ΦB) increased from 1.0 to 2.3 with a decrease in the target power input. cBN could be deposited above a threshold of the total momentum transfer per depositing boron atoms; 138 (eV amu)1/2, which is comparable to the values reported in the ion beam assisted depositions. Therefore, argon ions with an energy of 135 to 380 eV are considered to be equally contributory for cBN formation. Moreover, nucleation of cBN depends on Φi/ΦB, namely, the flux ratio of ion to boron, and requires accumulation of a certain surface state caused by ion bombardment effects, such as defects generation or densification.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1997
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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