In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 3 ( 2006-05-01), p. 1505-1509
Abstract:
In this article, we report on growth of AlInN∕GaInN multi-quantum-wells (MQWs) with high Al content (93%) by rf-plasma-assisted molecular-beam epitaxy on (0001) GaN/sapphire templates and on bulk GaN crystals. A series of samples with a barrier thickness of 3nm and with different well thicknesses of 1.5–3nm was grown. The wells were doped with Si at a concentration of 5×1019cm−3. Structures grown on (0001) GaN-based substrates are crack-free, as demonstrated by Nomarski contrast and scanning electron microscopy measurements. X-ray diffraction mapping of a and c lattice parameters shows that AlInN∕GaInN MQWs are fully strained and have up to 7% indium in the barriers and up to 10% In in the quantum wells. These structures exhibit intersubband absorptions at room temperature at a wavelength in the range of 2.45–1.52μm. The AlInN∕GaInN strain-compensated MQW structures, having good quality, are very attractive for ultrahigh-bit-rate telecommunication applications at 1.55μm wavelengths. In addition, because of their low average refractive index, they could be used as thick cladding layers for optical waveguides.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2006
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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