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  • 1
    Online Resource
    Online Resource
    Silicon nitride thin films deposited using electron-beam evaporation in an RF plasma MBE system
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 32, No. 2 ( 2014-03-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 32, No. 2 ( 2014-03-01)
    Abstract: Silicon nitride (SiNx) thin films were deposited on (100) Si wafers in a molecular-beam epitaxy growth chamber equipped with a customized multipocket electron-beam evaporator, a Si effusion cell, and an RF plasma source for reactive nitrogen. The films were characterized using atomic-force microscopy, spectroscopic ellipsometry, and specular x-ray reflectivity. For films deposited using an electron-beam Si source with N/Si  & gt; 1.33, the deposition temperature determined the density and refractive index. Stoichiometric Si3N4 films were produced when the deposition temperature was greater than 725 °C, in agreement with our previous results that used an effusion cell for Si. By using the electron-beam Si source, an order of magnitude increase in SiNx deposition rate was achieved over the conventional effusion cell method.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4867435
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
    American Vacuum Society ; 2019
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 37, No. 2 ( 2019-03-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 37, No. 2 ( 2019-03-01)
    Abstract: The authors present an in situ study of the effect of nitrogen plasma pulse time on the temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 °C by plasma assisted atomic layer epitaxy (ALEp). The growth surface evolution was monitored in real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements at an x-ray incidence angle of 0.8°. Nitrogen plasma pulse time (tp) was varied between 15 and 30 s in 5-s steps, and for all tp, the near specular scattering broadens and correlated peaks develop and evolve along the Yoneda Wing (YW). For tp ≥ 20 s, a YW with one correlated length scale evolves. At the end of the growth, the longest correlated length scale is 16.54 nm for tp = 25 s. Porod analysis of GISAXS intensity at high qy for tp = 25 s shows the formation of mounded shapes at the early stage of nucleation that transitioned to cylinders after about 3 unit cells of InN growth. Additionally, at tp = 25 s, the growth rate is highest with root mean square surface roughness and carbon impurity levels at or below atomic force microscopy and x-ray photoelectron spectroscopy sensitivity limits, respectively. At tp  & lt; 25 s, the growth surface may be undersaturated and at tp  & gt; 30 s, it appears that trimethylindium precursor molecules start to decompose, resulting in higher carbon content in the film. Thus, the nature of GISAXS correlated length scale directly correlates with the material quality. Additional ex situ characterizations reveal an electron mobility of 6–31 cm2/V s for a 3–5 nm thick InN film on a-plane sapphire, which is similar to the reported value of 30 cm2/V s for a 1300 nm thick InN film grown by molecular beam epitaxy directly on sapphire. Thus, the combination of in situ synchrotron x-ray analysis and ex situ characterization is a powerful approach to develop understanding of the growth mechanisms of ALEp of III-N materials in order to improve the quality by reducing impurities and broaden material applications.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.5063340
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2019
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 32, No. 3 ( 2014-05-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 32, No. 3 ( 2014-05-01)
    Abstract: Thin [(x)Al2O3 + (y)TiO2] nanolaminates (NLs) films of various TiO2 and Al2O3 volume fractions were deposited on n-Si substrates at 250 °C using remote plasma-assisted atomic layer deposition. While the overall thickness of the dielectric was held relatively constant at ∼16 nm, the relative ratio of Al2O3 to TiO2 in the NL was varied by changing the number of deposition cycles of each component. This permitted the evaluation of changes in the dielectric constant κ, index of refraction Nf, optical band gap, Eg, and the electrical performance of the resulting oxides. Capacitance–voltage and current–voltage results on 100 μm diameter circular capacitors were obtained. The data reveals that the high-content TiO2 films show limited evidence of oxide charge trapping and relatively large dielectric constants (k ∼ 15) with reduced reverse-biased leakage current, whereas the high-content Al2O3 films offer a larger optical band-gap and excellent insulating character with reduced leakage currents. In addition, the authors present composition assessments of the oxides by x-ray photoelectron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4818254
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 4
    Online Resource
    Online Resource
    Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
    American Vacuum Society ; 2020
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 38, No. 6 ( 2020-12-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 38, No. 6 ( 2020-12-01)
    Abstract: β-Ga2O3 is a promising ultrawide bandgap semiconductor for next generation radio frequency electronics. However, its low thermal conductivity and inherent thermal resistance provide additional challenges in managing the thermal response of β-Ga2O3 electronics, limiting its power performance. In this paper, we report the heteroepitaxial growth of β-Ga2O3 films on high thermal conductivity 4H-SiC substrates by molecular beam epitaxy (MBE) at 650 °C. Optimized MBE growth conditions were first determined on sapphire substrates and then used to grow β-Ga2O3 on 4H-SiC. X-ray diffraction measurements showed single phase (2¯01) β-Ga2O3 on (0001) SiC substrates, which was also confirmed by TEM measurements. These thin films are electrically insulating with a (4¯02) peak rocking curve full-width-at-half-maximum of 694 arc sec and root mean square surface roughness of ∼2.5 nm. Broad emission bands observed in the luminescence spectra, acquired in the spectral region between near infrared and deep ultraviolet, have been attributed to donor-acceptor pair transitions possibly related to Ga vacancies and its complex with O vacancies. The thermal conductivity of an 81 nm thick Ga2O3 layer on 4H-SiC was determined to be 3.1 ± 0.5 W/m K, while the measured thermal boundary conductance (TBC) of the Ga2O3/SiC interface is 140 ± 60 MW/m2 K. This high TBC value enables the integration of thin β-Ga2O3 layers with high thermal conductivity substrates to meliorate thermal dissipation and improve device thermal management.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/6.0000452
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2020
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 5
    Online Resource
    Online Resource
    Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
    American Vacuum Society ; 2017
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 35, No. 3 ( 2017-05-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 35, No. 3 ( 2017-05-01)
    Abstract: The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ∼0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to understand nucleation and growth mechanisms of ALEp to enable improvement in material quality and broaden its application.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4978026
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2017
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Location Call Number Limitation Availability
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