In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 35, No. 6 ( 2017-11-01)
Abstract:
Current chemicals used in electron beam (e-beam) lithography generate safety and waste management issues. To replace them, chitosan, a natural and abundant polymer soluble in water based solutions, was assessed as a positive and water developable resist for a two-layer e-beam lithography and as a mask for transfer by etching in silica. Fifty nanometer line patterns were successfully obtained in a chitosan film by e-beam lithography at doses between 160 and 300 μC cm−2, then, transferred into a silica layer by CHF3 plasma reactive ion etching with respect of the feature dimensions.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2017
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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