In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 5 ( 2004-09-01), p. 2542-2547
Abstract:
Thin nanocrystalline vanadium nitride (VN) films of low resistivity were examined as an extremely thin diffusion barrier to provide thermal stability in Cu∕VN∕SiO2∕Si systems. A 10-nm-thick VN barrier with grains ranging from several to ∼10nm in diameter provided excellent barrier properties. After annealing at 600°C for 1h, the barrier showed scarcely any change in structure and absence of Cu diffusion and/or decisive interfacial reaction in the system. This was interpreted to mean that the present barrier, which is made of a thermochemically stable δ-VN compound phase with a slightly nitrogen-rich composition and a nanocrystalline structure, was preferable to suppress the solid-phase reaction and/or diffusion, as well as the structural change upon annealing. It was revealed that the nanocrystalline VN barrier is an excellent candidate as a barrier in a forthcoming Cu metallization scheme.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2004
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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