In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 30, No. 6 ( 2012-11-01)
Abstract:
Single dopant atoms can affect transport properties in scaled semiconductor devices and coherent control of spin and charge degrees of freedom of single dopant atoms promises to enable quantum computing. The authors report on an improved technique for deterministic placement of single dopant atoms by single ion implantation with scanning probe alignment. Ions are generated in a microwave driven ion source, mass analyzed in a Wien filter, and impinge on spin readout devices after alignment of the ion beam to regions of interest with a noncontact scanning force microscope.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2012
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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