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  • American Vacuum Society  (11)
  • 1
    Online Resource
    Online Resource
    Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 32, No. 6 ( 2014-11-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 32, No. 6 ( 2014-11-01)
    Abstract: This study comprehensively investigates the effect of ultraviolet (UV) curing time on the physical, electrical, and reliability characteristics of porous low-k materials. Following UV irradiation for various periods, the depth profiles of the chemical composition in the low-k dielectrics were homogeneous. Initially, the UV curing process preferentially removed porogen-related CHx groups and then modified Si-CH3 and cage Si-O bonds to form network Si-O bonds. The lowest dielectric constant (k value) was thus obtained at a UV curing time of 300 s. Additionally, UV irradiation made porogen-based low-k materials hydrophobic and to an extent that increased with UV curing time. With a short curing time ( & lt;300 s), porogen was not completely removed and the residues degraded reliability performance. A long curing time ( & gt;300 s) was associated with improved mechanical strength, electrical performance, and reliability of the low-k materials, but none of these increased linearly with UV curing time. Therefore, UV curing is necessary, but the process time must be optimized for porous low-k materials on back-end of line integration in 45 nm or below technology nodes.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4900854
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 2
    Online Resource
    Online Resource
    Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
    American Vacuum Society ; 2002
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 20, No. 5 ( 2002-09-01), p. 2149-2153
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 5 ( 2002-09-01), p. 2149-2153
    Abstract: The optimization of Cu electropolishing processes was explored to be in the mass-transfer-limited plateau with a stable limiting current density and in concentrated phosphoric acid by elucidating surface morphologies and potentiodynamic polarization. After electropolishing, the average roughness of polished surfaces achieved to 1.1 nm. Both the x-ray photoelectron spectroscopy and the electrochemical impedance spectroscopy suggest that the existence of a passivation film on the polished surface contributed to the microleveling effect of Cu electropolishing. Moreover, this passivation layer also induces an application of end point in electropolishing.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1511218
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2002
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Investigations of pulse current electrodeposition for damascene copper metals
    American Vacuum Society ; 2002
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 20, No. 6 ( 2002-11-01), p. 2295-2298
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 6 ( 2002-11-01), p. 2295-2298
    Abstract: The influence of current density, duty cycle, and frequency of the applied pulse current on film qualities of electroplated copper was discussed. With various filled damascene structures, the corresponding filling power was optimized in a range of pulse current frequency. The optimized pulse current plating in conjunction with a leveler-free electrolyte resulted in a defect-free filling in approximate 100 nm damascenes and reduced the resistivity of Cu deposits.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1518974
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2002
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 4
    Online Resource
    Online Resource
    Leveling effects of copper electrolytes with hybrid-mode additives
    American Vacuum Society ; 2002
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 20, No. 6 ( 2002-11-01), p. 2233-2237
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 6 ( 2002-11-01), p. 2233-2237
    Abstract: 100 nm vias were completely filled with copper for interconnect applications using an electrolyte in the presence of polyethylene glycols (PEG) and a hybrid-mode additive, benzotriazole (BTA). Electrochemical analyses indicated that BTA with a higher concentration inhibited the copper deposition rate, whereas BTA with a lower concentration accelerated the copper deposition rate. This electrolyte thus generated an enhanced deposition gradient within a gap because the PEG molecules and the high concentration of BTA, adsorbed at the opening of the gap, inhibited the deposition. Meanwhile, a little BTA diffused into the inner part of the gap and thus accelerated the deposition of copper. Therefore, this two-component (PEG and BTA) additive electrolyte had the capacity of a three-additive bath (accelerators, suppressors, and levelers).
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1517262
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2002
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 5
    Online Resource
    Online Resource
    Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
    American Vacuum Society ; 2002
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 20, No. 4 ( 2002-07-01), p. 1311-1316
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 4 ( 2002-07-01), p. 1311-1316
    Abstract: By using an acid–copper electrolyte without levelers and brighteners, we achieved defect-free filling of 0.13 μm vias with aspect ratio 8:1. This novel electrolyte consisted of copper sulfate (CuSO4⋅5H2O), sulfuric acid (H2SO4), chloride ions (Cl−), and two different average molecular weights of polyethylene glycols (PEG). The smaller-molecular-weight PEG200, with higher diffusion ability, was identified to enhance cupric ions transporting into deep features and was treated as a bottom-up filling promoter. The larger-molecular-weight PEG2000, with higher polarization resistance, provided enough inhibition effect on cupric ion reduction to obtain denser and small-grained deposits in a lower-current-density region, which benefits the filling capability in submicron features. In addition, adding PEG2000 could reduce the interfacial energy between the electrolyte and the opening of trenches/vias to enhance the filling capability.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1486231
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2002
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 6
    Online Resource
    Online Resource
    Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
    American Vacuum Society ; 2002
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 20, No. 3 ( 2002-05-01), p. 940-945
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 3 ( 2002-05-01), p. 940-945
    Abstract: This work presents a novel leveler with low consumption and low diffusion that achieved defect-free filling in vias as small as 0.1 μm and generated as-deposited films with low resistivities. Experimental results indicate that the additive, 2-aminobenzothiazole (2-ABT), with benzyl and amino (–NH2) functional groups, is a desirable leveler. It produced a highly selective concentration gradient between the opening and the bottom of the feature. This novel leveler, with weaker adsorption, also reduced the consumption during copper electroplating, and eventually deposited a film with a high conductivity.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1477422
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2002
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 7
    Online Resource
    Online Resource
    Improving the quality of electroplated copper films by rapid thermal annealing
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 21, No. 2 ( 2003-03-01), p. 858-861
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 2 ( 2003-03-01), p. 858-861
    Abstract: The leveler, 2-mercaptopyridine (2MP), increases the filling power of copper electroplating electrolytes in plating 0.15 μm vias, but forms the plated copper metals of small-grained column structures with high resistivity. In this study, we used rapid thermal annealing (RTA) to effectively improve the film quality. After RTA at 400 °C for 30 s, the resistivity of Cu deposits was reduced from ∼16.1 to ∼2.4 μΩ cm. Moreover, the Cu(111) intensity of Cu deposits increased after RTA annealing.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1562641
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 8
    Online Resource
    Online Resource
    Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
    American Vacuum Society ; 2000
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 18, No. 6 ( 2000-11-01), p. 2835-2841
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 18, No. 6 ( 2000-11-01), p. 2835-2841
    Abstract: Gap-filling dynamics of several different species of additives for copper electrodeposition was investigated by monitoring the cross section of a partially filled copper profile on the scanning electron microscopy photo. The filling ration Δy/Δx between “bottom-up” with “sidewall shift” was found to be proportional to the filling power of additives. The adsorption-diffusion model combined with cathode polarization and cyclic voltammetric stripping measurements was employed to explain the attribution of additives in superfilling phenomena. The superfilling dynamics was achieved under behavior of additives providing selective inhibition gradient within the damascene feature. By means of those analyses, we have optimized the appropriate amount of additives and achieved the superfilling performance for 0.15 μm vias with aspect ratio 6 by an acid-copper electrolyte with polyethylene glycol, C1−, and 2-mercaptopyridine (2-MP). Due to the additive of 2-MP, chelate formed which enhanced adsorption ability on Cu0 surface, and the concentration gradient between side-wall shift and bottom-up in the damascene became high enough to attend superfilling electroplating.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1322042
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2000
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 9
    Online Resource
    Online Resource
    Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
    American Vacuum Society ; 2001
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 19, No. 3 ( 2001-05-01), p. 767-773
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 19, No. 3 ( 2001-05-01), p. 767-773
    Abstract: Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 μm features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 μm vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (−NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1368673
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2001
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 10
    Online Resource
    Online Resource
    Roles of copper mechanical characteristics in electropolishing
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 1 ( 2004-01-01), p. 116-119
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 1 ( 2004-01-01), p. 116-119
    Abstract: We investigated the effect of film stress, hardness, and grain size of copper films on copper electropolishing, which was considered as a next-generation technique in copper multilevel interconnects. The copper electropolishing rate was found to increase with an increase in the tensile stress of copper films. It was suggested that the tensile stress weakened metallic bonds between copper atoms and assisted the copper electropolishing rate, whereas the hardness and grain size of polished copper films did not relate directly to the copper electropolishing rate due to a negligible etching effect and no mechanical stress applied during copper electropolishing in a concentrated phosphoric acid electrolyte.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1633775
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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