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  • American Vacuum Society  (6)
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  • American Vacuum Society  (6)
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  • 1
    Online Resource
    Online Resource
    Effect of annealing on the stoichiometry of SrTiO3(001)*
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 12, No. 4 ( 1994-07-01), p. 2276-2280
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 12, No. 4 ( 1994-07-01), p. 2276-2280
    Abstract: A quantitative study of the variation of stoichiometry with temperature near the surface of SrTiO3 is conducted. Surface concentrations and the strontium depth profiles are obtained using Rutherford backscattering spectrometry and Auger electron spectroscopy. While the Auger electron spectroscopy demonstrates that the surface is strontium rich after annealing at temperatures ranging from 800 to 1300 °C, Rutherford backscattering measurements show no evidence of strontium enrichment beneath the surface unless the crystal is annealed at 1300 °C or higher. The observations indicate that changes in surface chemistry involve two processes: sublimation and segregation; which play different roles at different temperature ranges.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.579129
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Materials in nanotechnology: New structures, new properties, new complexity
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 21, No. 5 ( 2003-09-01), p. S194-S206
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 21, No. 5 ( 2003-09-01), p. S194-S206
    Abstract: The evolution of nanoscale science and technology has dramatically expanded the classes of materials being explored and even implemented in device applications. This article summarizes advancements in making low dimensional structures from inorganic and organic compounds, determining the resulting, and necessarily local properties and assembling complex structures.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.1600445
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal–oxide–semiconductor junctions
    American Vacuum Society ; 1996
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 14, No. 3 ( 1996-05-01), p. 1607-1610
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 14, No. 3 ( 1996-05-01), p. 1607-1610
    Abstract: Cross-sectional scanning tunneling spectroscopy experiments were performed under air-ambient conditions on cleaved Si-based metal–oxide–semiconductor (MOS) junctions. With the scanning tunneling microscope tip in the vicinity of the oxide–semiconductor interface, the electric field-induced depletion region was found to pinch-off the tunneling current similar to the effect in a MOS field-effect transistor (MOSFET) where increasing gate bias reduces the channel current. In this study, the experimentally observed dependence of the tip-semiconductor I-V characteristics on the gate bias was interpreted within a transfer-Hamiltonian tunneling model representing the tip-semiconductor junction and including both tip-induced band-bending and gate bias effects.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.589199
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1996
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Quantification of topographic structure by scanning probe microscopy
    American Vacuum Society ; 1997
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 15, No. 4 ( 1997-07-01), p. 1483-1493
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 15, No. 4 ( 1997-07-01), p. 1483-1493
    Abstract: Several mathematical approaches for quantifying the three-dimensional topographical structure from scanning probe microscopy images are evaluated. Variational, i.e., scale-dependent, roughness based on root-mean-square roughness, Fourier deconvolution, and the two-dimensional autocovariance function are compared for surfaces with widely varying character in order to develop criteria for accurate quantification. Thermally evaporated gold, a calibration grid, polycrystalline Si3N4, and silicon fracture surfaces serve as models for these techniques. The role of image artifacts on each approach is detailed.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.589480
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1997
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 5
    Online Resource
    Online Resource
    Probing the surface chemistry of polycrystalline ZnO with scanning tunneling microscopy and tunneling spectroscopy
    American Vacuum Society ; 1991
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 9, No. 2 ( 1991-03-01), p. 783-788
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 9, No. 2 ( 1991-03-01), p. 783-788
    Abstract: Scanning tunneling microscopy and spatially resolved tunneling spectroscopy have been used to examine polycrystalline ZnO surfaces in ultrahigh vacuum after bake-out, after a low temperature anneal that cleaned the surface, after a high temperature anneal, which segregated bismuth to the surface, after being dosed with O2 and H2O, and after exposure to air. The tunneling spectra depend both on the proximity to structural features, such as grain boundaries, and on the chemical composition of the surface. For example, the segregation of bismuth to the surface causes the tunneling spectra to have a p-type rectification. Our results also indicate that the rectification of tunneling spectra acquired in air is caused by surface hydration and that images of surfaces that have not been heated in vacuum have inferior resolution due to a reduction in the height of the apparent tunnel barrier. Spatially resolved tunneling spectroscopy has been used to demonstrate that surface hydration has a greater effect on the crystallite surfaces than on the grain boundary surfaces.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.585511
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1991
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 6
    Online Resource
    Online Resource
    Ferroelectric polarization dependent interactions at Pd–LiNbO3(0001) interfaces
    American Vacuum Society ; 2009
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 27, No. 6 ( 2009-11-01), p. 1337-1342
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 27, No. 6 ( 2009-11-01), p. 1337-1342
    Abstract: A combination of Auger electron spectroscopy and temperature-programed desorption was used to characterize the growth and interaction of Pd films with positively and negatively terminated ferroelectric LiNbO3(0001) surfaces. The growth mode of vapor-deposited Pd layers at 300K was found to be dependent on the direction of the ferroelectric polarization with layer-by-layer growth occurring on the negative (c−) surface and particle formation occurring on the positive (c+) surface. The Pd metal layers were also found to be more thermally stable on the c− surface relative to the c+ surface. These results provide another example of how the polarization orientation in ferroelectric materials affects adsorption and reaction on their exposed surfaces.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.3248268
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2009
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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