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  • American Vacuum Society  (3)
  • Physics  (3)
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  • American Vacuum Society  (3)
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  • Physics  (3)
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  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 2012
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 30, No. 4 ( 2012-07-01)
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 30, No. 4 ( 2012-07-01)
    Abstract: Aluminum oxide (Al2O3) layers, prepared by atomic layer deposition (ALD), provide excellent surface passivation properties on crystalline Si surfaces, which are of major importance for photovoltaic applications. Beyond the chemical passivation by reduction of the electronic surface state density, a supportive field effect passivation mechanism emerges at the Al2O3/Si interface. The atomic origin of the fixed negative charges that are responsible for the field effect is currently under discussion. In this contribution, thin layers of Al2O3 with thicknesses ranging from the submonolayer region to several nanometers have been grown on Si substrates by means of thermal ALD. The principle elements of the samples have been quantified by x-ray photoelectron spectroscopy as a function of the film thickness. Changes at the interface upon thermal annealing have been investigated in detail. After the first few ALD cycles an imperfect Al2O3 layer is found together with the formation of an ultrathin SiOx interlayer. Continued deposition leads to stoichiometric Al2O3 growth. Within the first ∼1 nm from the Si interface, additional O (“excess O”), surpassing the Al2O3 and SiO2 stoichiometry, is observed. The excess O does not completely react with the Si surface to SiO2 during thermal annealing. Therefore, interstitial O in near-interface Al2O3 is suggested to provide the fixed negatively charged states.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2012
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 12, No. 4 ( 1994-07-01), p. 2440-2442
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 12, No. 4 ( 1994-07-01), p. 2440-2442
    Abstract: Amorphous hydrogenated silicon (a-Si:H) based pn-doping superlattices grown by radio-frequency-plasma deposition onto crystalline Si substrates were cleaved in air according to the crystallographic orientation of the substrate material. Their cross-sectional face is investigated using scanning tunneling microscopy (STM) and scanning force microscopy (SFM). With constant current STM in a dry nitrogen ambient at atmospheric pressure tip deflections due to the pn-superlattice periodicity are observed. With contact mode SFM in air only the transition from the substrate to the superlattice thin film but no periodic structure is resolved. A model calculation suggests that the apparent periodic height variation in constant current STM is due to a difference between p- and n-type doped layers in their density of accessible states for tunneling.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 2001
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 19, No. 4 ( 2001-07-01), p. 1497-1501
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 19, No. 4 ( 2001-07-01), p. 1497-1501
    Abstract: Supported metal clusters and nanoparticles are of fundamental and technical interest, their use in heterogeneous catalysis being of particular importance. Yet on the atomic scale, there is only limited knowledge about the dependence of adsorption behavior and catalytic activity on particle size and morphology. In order to contribute to an understanding of such relationships in the case of hydrocarbon reactivity, we have studied the interaction of ethene with alumina-supported Pd, Rh, and Ir particles. Aggregates ranging in size from a few atoms up to several thousand atoms were prepared by metal vapor deposition onto a planar oxide support under ultrahigh vacuum conditions. The adsorption and dehydrogenation of ethene have been investigated by infrared and photoelectron spectroscopy. The infrared data reveal the formation of both π and di-σ bonded species upon adsorption at 90 K. On Pd, this involves a net charge transfer from the adsorbate to the metal, as shown by infrared spectra of co-adsorbed carbon monoxide. Upon heating to room temperature, the ethene adlayers on Rh and Ir deposits dehydrogenate to ethylidyne. In the case of Pd particles, this process is accompanied by the desorption of a particle-size-dependent fraction of the ethene.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2001
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Location Call Number Limitation Availability
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