In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 35, No. 1 ( 2017-01-01)
Abstract:
Single-crystal hexagonal perovskite YAlO3 has been attained through postdeposition rapid thermal annealing with temperatures above 900 °C on nanolaminated atomic-layer-deposited Y2O3 (2.03 nm)/Al2O3 (1.08 nm) multilayers. The perovskite film is epitaxially grown on GaAs(111)A substrates. The crystallography of the heterostructure was studied utilizing synchrotron radiation x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The epitaxial relationship between YAlO3 and GaAs is YAlO3(0001)[112¯0]∥ GaAs (111)[101¯] , as determined from the radial scan along the in-plane direction. The cross-sectional STEM image reveals that the crystalline YAlO3 is continuous and the XRD study detects no other crystalline phases.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2017
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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