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  • American Vacuum Society  (5)
  • Physics  (5)
  • 1
    Online Resource
    Online Resource
    Texture development and grain boundary faceting in an excimer laser-crystallized silicon thin film
    American Vacuum Society ; 2006
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 24, No. 5 ( 2006-09-01), p. 2322-2325
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 5 ( 2006-09-01), p. 2322-2325
    Abstract: A 50-nm-thick amorphous silicon film on a SiO2 substrate is crystallized by an excimer laser-induced sequential lateral solidification. In the crystallized film, the laser scanning direction has a tendency to generate the ⟨100⟩ texture formation, whereas the surface normal and another in-plane orientation (normal to the scanning direction), designated as rolling direction, do not reveal any distinct texture development. Some grain boundaries are faceted, suggesting having a low trap density. Thus, the presence of the faceted grain boundaries is favorable for polycrystalline silicon electronic devices, such as thin film transistors and solar cells. A further grain boundary faceting might be induced by annealing processes.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.2353845
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2006
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    Control of structural, electrical properties of (Ba,Sr)TiO3/RuO2 thin films by the application of amorphous (Ba,Sr)TiO3 layer
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 16, No. 4 ( 1998-07-01), p. 2448-2453
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 16, No. 4 ( 1998-07-01), p. 2448-2453
    Abstract: The structural, electrical properties of (Ba,Sr)TiO3[BSTO]/RuO2 thin films were controlled by the addition of amorphous BSTO layers between crystalline BSTO film and RuO2 substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at 60 °C and crystalline films. Crystalline films were prepared at 550 °C on amorphous BSTO layers. The thickness of amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in RuO2 surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maximum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.581365
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    Effects of annealing of (Ba,Sr)RuO3 bottom electrodes on the electrical properties of (Ba,Sr)TiO3 thin films
    American Vacuum Society ; 2001
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 19, No. 1 ( 2001-01-01), p. 281-285
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 19, No. 1 ( 2001-01-01), p. 281-285
    Abstract: The annealing of (Ba,Sr)RuO3 films which are structurally and chemically matched with (Ba,Sr)TiO3 films was performed in oxygen and nitrogen atmospheres in the temperature range of 600–750 °C for 30 min. The effects of annealing the (Ba,Sr)RuO3 on the physical and electrical properties of the (Ba,Sr)TiO3 films were investigated. The x-ray diffraction peak of the annealed (Ba,Sr)RuO3 film at high temperatures revealed that the (Ba,Sr)TiO3 film is thermally more stable than RuO2. The (Ba,Sr)RuO3 film under N2 annealed showed lower electrical resistivity and larger surface roughness compared with those under O2. In addition, from the sequential two-step annealing process using O2 and N2, and by reversing the annealing sequence, the electrical resistivity and the surface roughness of the (Ba,Sr)RuO3 film turned out to be reversible. The (Ba,Sr)TiO3 film on the N2 annealed (Ba,Sr)RuO3 showed a higher leakage current than that on the O2 annealed bottom electrode because rough surface can cause a high local electric field. The dielectric constant of the (Ba,Sr)TiO3 thin film increased with the annealing temperature of the (Ba,Sr)RuO3 bottom electrode regardless of the annealing atmosphere.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1333079
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2001
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 4
    Online Resource
    Online Resource
    Crystallization of amorphous silicon films by Cu-field aided rapid thermal annealing
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 21, No. 5 ( 2003-09-01), p. 2076-2079
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 5 ( 2003-09-01), p. 2076-2079
    Abstract: In this study, a technique, field aided rapid thermal annealing (FARTA) was proposed to crystallize the amorphous silicon films for a substantially short process time at low temperature. A spike shape pulsed rapid thermal annealing has been added to the field aided lateral crystallization (FALC) of amorphous silicon films deposited by plasma enhanced chemical deposition on glass. By adopting the FARTA process, directional crystallization of a-Si could be successfully achieved at 450 °C within a few hundreds of seconds. Other advanced crystallization methods such as FALC and metal induced lateral crystallization (MILC) normally require several hours for the same degree of crystallization even at 500 °C. Crystallization velocity using the FARTA process was measured to be 186.3 μm/h when the a-Si experienced 10 cycles of 60 s 450 °C thermal bias followed by 1 s 750 °C spike anneal. This value was six times faster than that by the MILC process at the same heating condition. From this study we found that both an electric field and the spike anneal are necessary for the crystallization of a-Si with a low thermal budget.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1606465
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 5
    Online Resource
    Online Resource
    Characterization of TiN barriers against Cu diffusion by capacitance–voltage measurement
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 4 ( 1998-07-01), p. 2019-2025
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 4 ( 1998-07-01), p. 2019-2025
    Abstract: Sputtered TiN was studied as a diffusion barrier in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures using various characterization methods, and their sensitivities for detecting breakdown of the barrier were compared. It was confirmed by scanning electron microscopy and Auger electron spectroscopy that breakdown of the TiN barrier occurred through out-diffusion of Si in addition to in-diffusion of Cu. Breakdown temperatures varied by more than 100 °C depending on characterization methods, and capacitance–voltage (C–V) measurement was most sensitive for detecting the failure of the TiN barrier. The effects of rapid thermal annealing (RTA) on barrier properties of TiN were investigated, and it was found by C–V measurement that the TiN(400 nm) RTA treated at 700 °C in a NH3 ambient was stable up to 590 °C for 2 h, while the reference TiN (400 nm) was stable up to 450 °C for 2 h.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590123
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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