In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 30, No. 6 ( 2012-11-01)
Abstract:
This study investigates the effects of thermal annealing on Al-doped MgxZn1−xO (AMZO) films. AMZO films were deposited by a radio-frequency magnetron sputtering system using a 4 in. ZnO/MgO/Al2O3 (76/19/5 wt. %) target. This study measures and reports the Hall results, x-ray diffraction (XRD), transmittance, and x-ray photoelectron spectroscopy (XPS) data. XRD results show that the ZnO (002) and MgO2 (002) wurtzite peaks in addition to the (111)-cubic peak disappeared after 1000 °C annealing. This indicates the coexistence of two phases in the as-grown AMZO films rebuilt after higher thermal treatment. The absorption edges of these as-grown AMZO films shifted toward the short wavelength of 323 nm under 80% transmittance, implying that band gaps can be tuned by changing the Mg content of the AMZO layer. The XPS spectra of AMZO films were also used to analyze the composition of the as-grown and annealed AMZO films.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2012
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
Permalink
