In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 8, No. 6 ( 1990-11-01), p. 1535-1538
Kurzfassung:
A fabrication process capable of forming T-shaped gates useful for high-performance GaAs field-effect transistor devices by exposing a single-layer resist with x rays is proposed in this work. The x-ray mask used in this method has absorber patterns with T-shaped cross sections, which are made up of two absorber layers. This method makes good use of the fact that the x-ray transmittance of materials such as resists and mask absorbers is higher than the ultraviolet/visible light transmittance used in photolithography. In order to confirm the practicality of this method, T-shaped patterns were formed experimentally using the positive resist XPB and an exposure system with an electron-excited x-ray tube (Pd target). The x-ray mask was fabricated by patterning two layers of W-Ti alloy absorber on a BN/polyimide membrane using an electron direct writing technology. It is demonstrated that the T-shaped pattern can be formed easily by using the proposed process.
Materialart:
Online-Ressource
ISSN:
0734-211X
,
2327-9877
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
1990
ZDB Id:
3117331-7
ZDB Id:
1475429-0
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