In:
Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers, Vol. 15, No. 6 ( 2020-06-01), p. 673-678
Abstract:
Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer
(ML) molybdenum disulfide (MoS 2 ) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS 2 with a lateral size of ∼22 μ m and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS 2 flakes onto a SiO 2 (∼100 nm)/ p ++ -Si substrate. Additionally, we demonstrate the fabrication of an n -type
MoS 2 -based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼10 6 , an off-state leakage current of less than 10 – 12 A, and a field effect mobility of ∼10.4
cm 2 /Vs at 300 K.
Type of Medium:
Online Resource
ISSN:
1555-130X
DOI:
10.1166/jno.2020.2817
Language:
English
Publisher:
American Scientific Publishers
Publication Date:
2020
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