In:
Journal of Nanoscience and Nanotechnology, American Scientific Publishers, Vol. 15, No. 10 ( 2015-10-01), p. 7615-7619
Abstract:
The In 0.53 Ga 0.47 As-based planar-type junctionless fieled-effect transistor (JLFET) and fin-type FET (FinFET) have been designed and characterized by technology computer-aided design (TCAD) simulations. Because of their attractive material characteristics, the combination
of In 0.53 Ga 0.47 As and InP has been adopted in some of the most recent semiconductor devices. In particular, the In 0.53 Ga 0.47 As-based transistor using an InP buffer is highly attractive due to its superior electrostatic performance which results from
the by particular characteristics of the In 0.53 Ga 0.47 As material. In this paper, we focus on using small-signal RF modeling and Y-parameter extraction methods th extract various RF characteristics, such as gate capacitance, transconductance ( g m ), cut-off
frequency ( f T ), and maximum oscillation frequency ( f max ). The proposed In 0.53 Ga 0.47 As-based FinFET exhibits an on-state current ( I on ) of 1030 μ A/ μ m and an off-state current ( I off )
of 1.2×10 −13 A/ μ m with a threshold voltage ( V th ) of 0.1 V, and a subthreshold swing (S) of 96 mV/dec. In addition, f T and f max are determined to be 243 GHz and 1.6 THz, respectively.
Type of Medium:
Online Resource
ISSN:
1533-4880
DOI:
10.1166/jnn.2015.11141
Language:
English
Publisher:
American Scientific Publishers
Publication Date:
2015
SSG:
11
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