In:
Journal of Nanoscience and Nanotechnology, American Scientific Publishers, Vol. 21, No. 3 ( 2021-03-01), p. 1862-1868
Abstract:
In this study, we implemented reversible current switching (RCS) of 100 mA in a two-terminal device based on a vanadium dioxide (VO 2 ) thin film, which could be controlled by far-infrared (FIR) laser pulses. The VO 2 thin films used for fabrication of two-terminal
devices were grown on sapphire (Al 2 O 3 ) substrates using a pulsed laser deposition method. An optimal deposition condition was determined by analyzing the resistance-temperature curves of deposited VO 2 thin films and the current–voltage characteristics
of two-terminal devices based on these films, which were suggested in our previous works. The film surface of the VO 2 -based device was directly irradiated using focused CO 2 laser pulses, and the insulator-metal transition or metal-insulator transition of the VO 2 thin film could be triggered depending on laser irradiation. Consequently, RCS of up to 100 mA could be accomplished. This on-state current is close to the upper limit of the current flowing through our VO 2 device. The switching contrast, defined as the ratio between on-state and
off-state currents, was evaluated and found to be ˜11,962. The average rising and falling times of the switched current were found to be ˜29.2 and ˜71.7 ms, respectively. In comparison with our previous work, the improved heat dissipation structure and the high-quality thin film could maintain the switching contrast at a similar level, although the on-state current was increased by about two times.
Type of Medium:
Online Resource
ISSN:
1533-4880
DOI:
10.1166/jnn.2021.18905
Language:
English
Publisher:
American Scientific Publishers
Publication Date:
2021
SSG:
11
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