In:
Journal of Nanoscience and Nanotechnology, American Scientific Publishers, Vol. 8, No. 3 ( 2008-03-01), p. 1350-1354
Abstract:
Si-implanted thermal SiO 2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation
region of the SiO 2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO 2 network structure.
The presence of blue band emission (430–470 nm) in the implanted SiO 2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover
the pre-implantation condition after a thermal treatment.
Type of Medium:
Online Resource
ISSN:
1533-4880
DOI:
10.1166/jnn.2008.327
Language:
English
Publisher:
American Scientific Publishers
Publication Date:
2008
SSG:
11
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