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  • 1
    Electronic Resource
    Electronic Resource
    An arc discharge nitrogen atom source (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2994-3000 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An intense nitrogen atom beam source of simple construction, with easy handling and maintenance was built and tested. Nitrogen atom beams with an intensity estimated to be 1019 atom/sr s and with an average kinetic energy of 0.8–2 eV in the forward direction were obtained. This novel atom source can be successfully ignited using pure nitrogen gas and operated stably during several hours of continuous performance. The temperature-rise effect of calorimetric sensors due to the bombardment of the N atom beam was used to analyze the intensities and kinetic energies of nitrogen atom beams. The emission spectra from the arc also show that a high concentration of atomic nitrogen was produced using this source. Experiments such as the nitrogen atom beams interacting with substrates to form a TiON film and a carbon nitride film indicate the high concentration of atomic nitrogen in the beam. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148232
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of C60 films by partially ionized fullerene beams (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4142-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C60 films have been deposited by partially ionized cluster beam deposition in which a C60 beam is partially ionized by electron impact and then accelerated by an acceleration field Va towards the substrate where the films are deposited. The experimental results show that the ionized C60 molecules in the evaporated beam are fragmented upon collision with the substrate under the elevated accelerating fields Va. Particularly, as Va exceeds about 400 V, almost all the C60 molecules including ionized and unionized ones are broken into fragments in the deposition films and the resulting films turn out to be amorphous carbon layers, as indicated by the measurements of Raman spectra, x-ray diffraction, and ellipsometry. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359504
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic and mechanical properties of carbon nitride films prepared by laser ablation graphite under nitrogen ion beam bombardment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1361-1363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films have been formed on Si(100) substrates by laser ablation of graphite under a low energy nitrogen ion beam bombardment. Data of Raman shift and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. Time-of-flight measurements suggest the existence of paracyanogen-like materials, such as C4N4, in the films. High energy backscattering spectrometry has shown that the percentage of N content in the film is 41% or so. The x-ray diffraction and transmission electron micrograph measurements have also been taken to characterize the crystal properties of the obtained films. Qualitative tests indicate the films of high Vickers hardness Hv, and of good adhesion to the silicon substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112052
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  • 4
    Electronic Resource
    Electronic Resource
    Light emission of C60 embedded in porous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 783-785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated samples with C60 implanted into porous silicon with the ionized cluster beam deposition approach for improving the light emission of C60. We have obtained intense and well-resolved photoluminescence spectra under excitation of Ar+ laser (514.5 nm) at room temperature. The depth analysis of secondary ion mass spectroscopy showed that C60 had been incorporated into porous silicon. A large number of fine-structure peaks in the photoluminescence spectrum indicated the strong coupling of vibrational progressions with electronic states of C60 induced by the interaction between C60 molecule and nanometer-sized silicon particles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115466
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