Publication Date:
2016-05-11
Description:
Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4.5 nm or thinner) atomic-layer-deposition grown HfO 2 as gate insulator, and shown to exhibit high gate efficiency, i.e., all examined (totally 76) devices present very low room temperature subthreshold swing with an averaged value of 64 mV/Dec, without observable carrier mobility degradation. The gate leakage of the CNT FET under fixed gate voltage is dependent not only on the thickness of HfO 2 insulator, but also on the diameter of the CNT. The vertical scaling limit of CNT FETs is determined by gate leakage standard in ultra large scale integrated circuits. HfO 2 film with effective oxide thickness of 1.2 nm can provide both excellent gate electrostatic controllability and small gate leakage for sub-5 nm FETs based on CNT with small diameter.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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