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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Evolution of microstructure in nanocrystalline Mo-Cu thin films during thermal annealing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2435-2440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of microstructure in Mo-Cu thin films during annealing has been investigated by in situ sheet resistance measurements, ex situ x-ray diffraction, and in situ hot-stage as well as conventional transmission electron microscopy. Mo-Cu thin films, deposited on various glass substrates by magnetron sputtering at ∼30 °C, were supersaturated solid solutions of Cu in Mo with a nanocrystalline microstructure. The as-deposited films had large compressive residual stresses owing to the low homologous deposition temperature and low Ar pressure during deposition. Annealing results showed two distinct sets of microstructural changes occurring in the temperature ranges between ∼300 and 500 °C, and ∼525 and 810 °C. In the lower-temperature range, anisotropic growth of nanocrystallites was accompanied by stress relaxation without any observable phase separation. At temperatures greater than ∼525 °C, the metastable solid solution collapsed and Cu precipitated at the grain boundaries. Increasing temperature resulted in the coarsening of Cu precipitates and simultaneous growth of Mo grains. At temperatures greater than ∼700 °C, phase separation and grain growth approached completion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360756
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical and structural characterization of physical-vapor deposited CuInSe2 for solar cell applications (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2637-2642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports the results of a comparative study of chalcopyrite-structure CuInSe2 deposited by three techniques, three-source evaporation, reactive sputtering and a hybrid sputtering, and evaporation method. All films exhibit comparable microstructures and microchemistries. Evaporated and hybrid-process films include significant porosity. All layers show dislocations, twins, and stacking faults. No second phases were observed in layers deposited by any of the techniques, independent of film composition. Data supporting this conclusion include average and single-grain energy-dispersive x-ray fluorescence spectroscopy measurements, diffraction studies of the film structure, and transmission electron microscopy images of the films. Finally, grain sizes can be increased by annealing films at temperatures above 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345471
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