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  • 1
    Electronic Resource
    Electronic Resource
    Annealing behavior of Ga and Ge antisite defects in neutron-transmutation-doped semi-insulating GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7315-7317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evaluation of GaAs and GeAs antisite defects in neutron-transmutation-doped semi-insulating GaAs was studied by the photoluminescence measurements at temperatures ranging from 15 to 80 K. The annealing behavior of both the GeAs acceptors and the band-edge distortion, induced by the neutron irradiation, plays an important role in the detection of GaAs double acceptors. The 200-meV level of the GaAs double acceptor cannot be observed unless the 30-meV GeAs and 78-meV GaAs levels are partially or completely filled with electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349749
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  • 2
    Electronic Resource
    Electronic Resource
    The role of Ga antisite defect in the activation process of transmuted impurities in neutron-transmutation-doped semi-insulating GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 363-366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In neutron-transmutation doping for undoped and In-doped GaAs irradiated with thermal and fast neutrons of 1.5×1018 and 7.0×1017 cm−2, we have found for the first time photoluminescence emissions around 860 and 935 nm at 77 K associated with the two difference levels of Ga antisite defect (GaAs). It is suggested that the annealing of GaAs defects plays an important role in the activation process of transmuted impurities as well as the annealing of As antisite defects forming midgap electron traps. The GaAs defects are annihilated in an annealing temperature range from 650 to 700 °C, accompanied by an abrupt decrease in resistivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347145
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic force microscopy using ZnO whisker tip (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3330-3332 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an atomic force microscope (AFM) using a zinc oxide (ZnO) whisker crystal as a probing tip. The ZnO whisker crystal is tetrapodal in shape, with each leg having a length of 5–30 μm, a radius of curvature less than 10 nm, and a cone half angle of 1°–2°. Polyimide thin films rubbed with cloths as liquid-crystal aligning films were employed for AFM imaging. Due to the needle shape of the probing tip, the AFM was able to resolve the tiny grooves (3–5 nm deep, 60–80 nm apart) on these films more clearly than that using a conventional pyramidal tip. The new AFM will be available for precise evaluation of surfaces on which fine structures are microfabricated in nanometer scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142548
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  • 4
    Electronic Resource
    Electronic Resource
    Bandpass photon detector for inverse photoemission spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 87-90 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance of the bandpass photon detector for inverse photoemission spectroscopy has been significantly improved. The detector basically consists of a simple combination of a SrF2 entrance window and a commercial Cu–BeO photomultiplier. RbCl (KBr) evaporation onto the SrF2 window realizes a FWHM of 0.51 eV (0.58 eV), at the sacrifice of sensitivity. On the other hand, KCl evaporation onto the first dynode of the photomultiplier provides good characteristics for the photon detector not only with respect to the FWHM but also in terms of the sensitivity. The new detector has a FWHM of 0.47 eV with a maximum response at a photon energy of 9.4 eV. The sensitivity is improved by about one order of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144407
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  • 5
    Electronic Resource
    Electronic Resource
    1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4119-4121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of InAsP-based laser diodes at 1.3 μm has been realized according to guidelines of a large conduction-band-offset material (ΔEc) with a large optical confinement factor (Γ). Using photoluminescence excitation spectroscopy measurements, it was found that the conduction-band offset of InAs0.52P0.48P/InGaAsP is the half of the band-gap energy difference (0.5 ΔEg), which is larger than that of conventional quaternary material systems. A strain-compensation growth technique enabled the fabrication of a large number of wells for large Γ. For broad-area laser diodes, the maximum operating temperature increased as the number of wells increased from 4 to 15. In buried heterostructure lasers with ten wells, with high-reflectivity coating on both facets, continuous-wave lasing operation at temperatures up to 150 °C was achieved with a characteristic temperature of 59 K (30〈T〈70 °C) demonstrating the suitability of InAsP for high-temperature operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359497
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by thermally stimulated current spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3552-3555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evaluation of deep defects in unannealed and annealed Fe-doped semi-insulating InP was studied using thermally stimulated current (TSC) and photoluminescence (PL) methods. Four TSC peaks with an ionization energy of 0.16, 0.23, and 0.42 eV, respectively, are observed clearly at an annealing temperature ranging from 400 to 700 °C. A 0.42 eV trap is associated with a deep phosphorous vacancy complex defect. 0.16 and 0.32 eV traps are related to the 917 and 888 nm PL emissions, respectively. These emissions are attributed to the deep-donor-acceptor pair transition and exciton bound to a deep level acceptor, respectively, while the 0.23 eV trap is likely to be buried in a broad TSC peak observed in a starting sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357413
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of domain boundaries on the Si (111) 7×7 surface by scanning tunneling microscope (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1313-1315 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A highly reliable scanning tunneling microscope system equipped with a field ion microscope yielded successful observation of a domain boundary on the Si(111) 7×7 reconstructed surface. For the first time, we revealed its detailed structure at the atomic level. The boundary consists of holes far larger than the corner holes of the dimer-adatom-stacking fault (DAS) model and bridge-like structures with three 2×2 subunits. The ditch structure of this boundary is running to the [1¯10] direction, i.e., to the direction of the shorter diagonal of the 7×7 unit cell. We discussed that a misfit of the 7×7 periodicity between the neighboring domains caused this ditch structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103468
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of Ga antisite defect in electron-irradiated semi-insulating GaAs by photoluminescence (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 843-845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cation antisite defects produced in semi-insulating GaAs by 30-MeV electron irradiation were studied using a photoluminescence (PL) method. PL emissions associated with a double acceptor GaAs, lying at 78 and 200 meV above the valence band, were observed at 860 and 935 nm in 600 °C annealed samples. The former emission is a prominent spectrum with its phonon replica at 880 nm, whereas the latter is buried in broad emissions consisting of the defect complexes such as the VAs-CAs complex. The electron irradiation-induced GaAs defects are ∼102 times smaller than those produced in neutron irradiated semi-insulating GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107763
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  • 9
    Electronic Resource
    Electronic Resource
    Thermally stimulated current in neutron-transmutation-doped semi-insulating GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1326-1328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evaluation of the defects in neutron-transmutation-doped semi-insulating GaAs was studied using a thermally stimulated current (TSC) method. Some native defects were decomposed by the neutron irradiation and one TSC peak was observed in an as-irradiated sample. This peak is associated with a complex defect, which is identified as a AsGa-VAs complex according to the analysis of the activation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105489
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  • 10
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy using a ZnO whisker tip (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3243-3245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A zinc oxide (ZnO) whisker crystal has been examined as a probing tip for scanning tunneling microscopy (STM). Atomic resolution images of the surfaces of highly oriented pyrolytic graphite and Si(111)-7×7 structures are successfully observed by STM using a ZnO whisker tip, demonstrating that the ZnO whisker crystal is applicable to a STM tip.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111298
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