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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 890-892 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and operated large two-dimensional (2D) arrays of phase-locked surface-emitting semiconductor lasers. The arrays were fabricated by reactive ion beam etching of epitaxial Fabry–Perot resonators comprising GaAs/AlGaAs quantum wells surrounded by AlAs-AlGaAs quarter-wave mirrors. Different arrays corresponding to different pixel size (2–5 μm) and spacing (1–2 μm) were produced to investigate evanescent coupling between pixels. The arrays were photopumped so that the array size could be conveniently varied from 1×1, 2×2,... up to 20×20. Except for the 1×1 which emits a circular pattern, all arrays exhibit a well-defined four-lobed far-field pattern in agreement with our theoretical analysis of the optical modes which predicts domination by the 2D out-of-phase eigenmode. As a consequence this pattern can be understood with simple Fraunhofer diffraction theory. The angular spread of the lobes, determined by the periodicity of the array elements, is 10° for the array with element size/spacing of 4/1 μm. The widths of the lobes are 6.7° for the 2×2 and narrow to 3.2° with increasing number of pixels in the array. The array exhibits a sharp onset for lasing, operation on a single longitudinal mode, and a linewidth which narrows to ∼1 A(ring) with increasing array size. The differential power efficiency is as high as 70%. These observations provide further impetus and guidance for the development of 2D laser diode arrays.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 1385-1399 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The complete dipole oscillator strength distribution for N2 has been calculated using the multiple scattering model. From this, the moments of the distribution S(μ) and L(μ) have been computed for −6≤μ≤2. The results are analyzed by decomposing the total moments according to the contributions from various subshells and also according to the contributions from various spectral ranges, e.g., discrete vs ionizing excitations. Since many physical properties depend on these moments, this analysis can pinpoint the spectral ranges with the greatest influence. Special attention is devoted to the distinctly molecular effects on the dipole oscillator strength distribution and its moments, particularly for those channels affected by shape resonances. The Rydberg series, for example, are significantly affected. This analysis offers an explanation for the weakness of certain dipole allowed Rydberg series and suggests a tentative new assignment for Worley's third series.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All-optical modulation is observed at room temperature in a GaAs/AlGaAs multiple quantum well nonlinear directional coupler using femtosecond pulses. The origin of the ultrafast (〈500 fs) recovery of the device is attributed to the optical Stark effect.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1209-1211 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical bistability of electronic origin has been observed in strip-loaded waveguides in a GaAs/AlGaAs multiple quantum well structure. Single-mode waveguides were fabricated by reactive ion etching of an epitaxial AlGaAs layer above the quantum wells. The waveguides were operated as nonlinear Fabry–Perot étalons with 30% reflectors provided by the cleaved ends. Phase shifts of 2π were observed in some devices.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3360-3362 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report continuous-wave room-temperature operation of a semiconductor ring resonator diode laser with a single Y-junction outcoupling waveguide. This device with a 150 μm radius and 8-μm-wide etched-rib waveguide has a threshold current of 72 mA and emits up to 1 mW of single-frequency output. The side-mode-rejection ratio of this laser exceeds 22 dBm over a (approximately-greater-than)50 mA current range corresponding to a stable operating mode of the laser. Studies of the emission behavior in this and other similar ring lasers suggest that the ring is lasing in "whispering gallery'' modes, and also that the Y junction is affecting mode selection in the ring.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated large, two-dimensional (2D) arrays of optically pumped, phase-locked vertical cavity surface-emitting lasers that emit more than 50% of their light in a central on-axis lobe. The emission of the arrays was modified from the usual four-lobed far-field of 2D coupled arrays by incorporation of a binary phase-shift mask on the surface of the array. The array consists of Fabry–Perot resonators comprising GaAs/AlGaAs quantum wells surrounded by AlAs/AlGaAs quarterwave mirrors with a multiple order AlGaAs phase-delay layer on the top mirror stack. The phase-shift layer was etched away on alternating elements of the array. The resulting on-axis emission had an angular width of 2° for an array of approximately 100 elements.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2714-2716 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed multiple optical Bloch waves in a semiconductor photonic lattice. This photonic lattice comprises epitaxial quarter-wave periodic layers surrounding a periodic quantum-well region. After growth, the layers are structured laterally into periodic square unit cells by reactive-ion-beam etching. When photoexcited, the lattice emits a complex angular distribution of photons that reflects its periodic structure. Scattered light is distributed according to the Laue conditions in analogy with x-ray diffraction from a bulk crystal. Optical Bloch waves photostimulated in the lattice are analogous to electron Bloch waves in an atomic lattice. These optical Bloch waves exhibit long-range translational symmetry and local symmetry due to the shape of the unit cell. Interestingly, the far-field pattern of stimulated emission gives a direct mapping of the allowed Bloch wave vectors in the Brillouin zone. The mapping exhibits a wave-vector gap at the Bragg condition and may be associated with a photonic energy gap. In addition to measuring the intensity distribution of these Bloch waves, we directly measure the phase of the wave by polarization shearing interferometry.
    Type of Medium: Electronic Resource
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