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  • 1
    Electronic Resource
    Electronic Resource
    Conduction mechanisms in erbium silicide Schottky diodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3873-3879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction mechanisms in erbium silicide Schottky diodes on n-type silicon have been studied over a temperature range of 25 to 160 K. Thermionic emission is the dominant carrier transport mechanism above 70 K. Below this temperature, deviations are apparent in the zero-bias barrier height and ideality factor. However, the flat-band barrier height is shown to remain constant over the entire temperature range. The Fermi level is demonstrated to be pinned to the conduction band. A new quantity, the flat-band saturation current (Isf) is defined. Plots of n ln(Isf/T2) vs 1/T are found to give an excellent fit to the data over 28 orders of magnitude. From these plots the flat-band barrier height and the modified Richardson constant are obtained directly. This technique provides a completely self-consistent and more reliable way of obtaining these parameters than do previous methods. For low temperatures and low forward bias, recombination via tunneling through surface states becomes the dominant conduction mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352899
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and infrared investigation of erbium silicide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2367-2371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky diodes fabricated from erbium silicide on n-type silicon have been studied to examine their suitability as infrared detectors. The devices were fabricated by thermal evaporation onto 〈100(approximately-greater-than) silicon. The electrical barrier height of 0.28 eV measured by current-voltage and current-voltage-temperature techniques is consistent with that measured by previous workers. The photon barrier height is found to be close to the electrical barrier height. The quantum efficiency at 2.0 μm is found to be 0.52%, comparable to that of unenhanced PtSi, while the dark current is less than 10−7 A cm−2 at 77 K. We conclude that ErSi2 has considerable potential for use in infrared detector arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351578
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Television memory and display unit (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 2143-2146 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An inexpensive memory unit has been developed to store and display a grey-scale image. The format is 512×256×8 bits, and expansion to larger formats or color is straightforward. The memory unit can be loaded from a small microcomputer such as the Apple IIe, and thus brings image processing within reach of the small laboratory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138384
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  • 4
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    Hole doping dependence of critical current density in YBa2Cu3O7−δ conductors (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-06-17
    Description: One of the central themes in cuprate superconductivity is the evolution of the electronic properties with the charge carrier concentration, p , expressed as the number of holes per Cu ion in the CuO 2 planes. In YBa 2 Cu 3 O 7−δ (YBCO), p is well known to vary with oxygen content (δ) and with substitution of Ca 2+ for Y 3+ . In this Letter, we show that p also varies with the fraction of Cu–O “chain layer” stacking faults. The resulting parabolic variation in the superconducting transition temperature ( T c ) is also well known; however, the effect on the critical current density ( J c ) is less well explored. We show that the self-field J c follows a common trend for all these hole doping methods, rising to a sharp peak on the slightly overdoped side of the T c ( p ) parabola. In contrast, the in-field J c anisotropy at high temperatures and low fields is determined solely by the stacking-fault fraction, not by hole doping, such that a sample free from stacking faults tends towards an isotropic J c . These results serve to emphasize the role of sample microstructure in determining J c in-field anisotropy.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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