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  • 1
    Electronic Resource
    Electronic Resource
    Optical absorption of microcrystalline Si-Ni thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1987-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption behavior of microcrystalline Si-Ni thin films (μc-Si-Ni) with a homogeneous and heterogeneous microstructure is investigated. In the homogeneous μc-Si-Ni specimens the structural phase consists of nanometer-sized grains. The heterogeneous specimens consist of a network of micrometer-sized crystalline Si needles. The meshes of the Si needle network are filled with nanometer-sized grains. The optical absorption of the specimens is compared with the structural properties. The optical absorption of μc-Si-Ni below an energy of 1.7 eV is described by a model of grain boundary states while above 2.0 eV optical transitions in the nanometer sized grains are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360172
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  • 2
    Electronic Resource
    Electronic Resource
    Carbon doping of InSb using CBr4 during growth by gas-source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1235-1237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping of epitaxial InSb films grown by gas-source molecular beam epitaxy was studied using carbon tetrabromide as the carbon dopant source. Carbon was found to be a p-type dopant in InSb, yielding the highest as-grown acceptor concentrations to date, up to mid 1020 cm−3 as deposited. Room temperature mobilities ranged from 35 to 90 cm2/V s depending upon doping level. The hole concentration was found to be relatively insensitive to growth temperature between 325 and 400 °C. Higher growth temperatures required higher Sb fluxes in order to maintain a constant hole concentration. Hole concentration increased linearly with increasing CBr4 up to 5×1020 cm−3. Further increase in the dopant flow reduced the hole concentration and mobility and produced polycrystalline material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121024
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  • 3
    Electronic Resource
    Electronic Resource
    Violet luminescence from anodized microcrystalline silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1290-1292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline silicon (μ-Si) thin films were anodized in dilute HF solutions in the same manner as forming porous materials. It is demonstrated for the first time that the anodized μ-Si thin films show strong violet luminescence (415 nm) at room temperature. Visible green and red emissions were also observed accompanying the violet luminescence. Structural investigations with scanning electron microscopy indicate that any formation of micrometer-sized pores which is typical for porous silicon does not exist in the anodized μ-Si thin films as reported here. This fact is useful for device applications of silicon-based materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112976
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  • 4
    Electronic Resource
    Electronic Resource
    Argon ion damage in self-assembled quantum dots structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2935-2937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122635
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  • 5
    Electronic Resource
    Electronic Resource
    Charge separation in coupled InAs quantum dots and strain-induced quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an InAs self-assembled quantum dot structure designed to spatially separate and store photo-generated electron-hole pairs. The structure consists of pairs of strain-coupled quantum dots. Separation of electron-hole pairs into the quantum dots and strain-induced quantum dots has been observed using power-dependant photoluminescence and bias-dependent photoluminescence. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123798
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  • 6
    Electronic Resource
    Electronic Resource
    Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 733-735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse spin lifetimes of spin-polarized photogenerated carriers in InAs self-assembled quantum dots are extracted from the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect). Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to in the InAs wetting layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344565
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