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  • American Institute of Physics (AIP)  (3)
Document type
Publisher
  • American Institute of Physics (AIP)  (3)
  • Elsevier  (10)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2296-2303 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the influence of the three parameters (temperature of sintering, lead content, and duration of the sintering) on the growth of the (2:2:2:3) phase in ceramics of nominal composition Bi2−xPbxSr2Ca2Cu3O10−x/2, and have determined the compositions and thermal conditions leading to ceramics with Tc≈110 K and containing more than 95% of this phase. We show that this result can be obtained by usual calcination near 880°C in air, without recurring to the introduction of excess in the constituants, providing that intermediate grinding are effected, in order to reactivate the formation of the (2:2:2:3) phase which otherwise saturates for long durations of sintering. The suitable nominal compositions (0.3≤x≤0.4) correspond to those that yield inside the grains a lead content in the vicinity of the limit of solubility for lead. From the results of the preceding investigations and of experiments effected on lead-substituted single crystals of the (2:2:1:2) phase, we have clarified the role played by lead, at the microscopic level, in the enhancement of the formation of the (2:2:2:3) phase. The inferred role is the establishment of strong bonding between the slabs which are the buildings blocks of the structure of the superconducting phases, these slabs being almost independent in the lead-free compounds. The origin of the stronger bonding is discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4426-4428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the engineering of sets of mesas on lead-substituted single crystals of Bi2Sr2CaCu2Oy. Each mesa behaves as a series array of intrinsic Josephson junctions with, up to 70 K, "two states'' hysteretic I(V) characteristics, free of branching, whose RnIc products can be tuned through geometrical patterning and adjustment of the lead contents. RnIc values as high as 550 mV at 4.2 K have been reached. The tuning through lead substitution is attributed to the decrease of the anisotropy with increasing lead content.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2227-2229 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of mechanical stress on solid phase epitaxial recrystallization of implanted amorphous III-V semiconductor layers is studied for the first time. A dual approach is used, involving either direct application of uniaxial stress on whole GaAs samples or the use of strained InGaAs layers deposited on InP substrates with indium composition as a stress control parameter. Observations show that with high applied stresses up to a few kilobars recrystallization kinetics remain unaltered. While homogeneous coherent strain does not bear any influence on interface roughness during regrowth, inhomogeneous strains due to defects greatly enhance the growth front roughness. This last result is interpreted in terms of defects acting as generating sources of additional defects during recrystallization.
    Type of Medium: Electronic Resource
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