Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 5527-5530
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
SiO2 thin films, deposited by the plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron-paramagnetic-resonance signals that are interpreted in terms of methyl- and dimethyl-associated centers. The former are observed in as-deposited films and in films thermally treated below 500 °C while the latter are observed in films that have been thermally treated between 700 and 950 °C. These hydrocarbon-containing paramagnetic centers originate from TEOS's ethyl constituents that are incorporated in the SiO2 film during growth.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354210
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